Physical properties of Indium Antimonide (InSb)
Physical properties of Indium Antimonide (InSb) Basic Parameters at 300 K. Band structure and carrier concentration. Basic Parameters of Band Structure and carrier concentration. Temperature Dependences. Energy Gap Narrowing at High Doping Levels. Effective Masses and Density of States. Donors and Acceptors.
Indium antimonide—Constraints on practicality as a …
and where ε ∞ is the background permittivity (high-frequency dielectric constant). The plasma frequency is ω p = n e q e 2 / (m ∗ ε 0) , ω c = − q e B 0 / m ∗ is the cyclotron frequency, and Γ = − q e / μ m ∗ is the collision frequency. Also, n e is the free electron density, q e = − e is the electron charge, ε 0 is the free-space permittivity, m ∗ = …
Antimonide
Antimonide compound semiconductors are the family of III–V materials with a crystal lattice constant of ∼6.1 Å (Fig. 4) that can be grown lattice-matched on gallium antimonide (GaSb) or indium arsenide (InAs) substrates.This family includes the three binary compounds InAs, GaSb, AlSb, and their alloys.
Properties of indium antimonide thin films as fast-response …
Journal Article: Properties of indium antimonide thin films as fast-response pressure transducers Title: Properties of indium antimonide thin films as fast-response pressure transducers Journal Article · Sun Jun 01 00:00:00 EDT 1975 · …
New Indium Antimonide-Based IR Detectors Surpass …
A high-resolution mid-wave infrared indium antimonide image of the National Mall in Washington D.C. with the Capitol building. Courtesy of IR Cameras. Today's infrared imaging systems based on high-performance InSb FPAs offer unmatched sensitivity for a variety of application-specific requirements where either SWIR or …
A Strategic Review on MIR Photodetectors: Recent Status …
Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 703)) ... III–V and II–VI ternary alloy detectors, indium antimonide (InSb) photodiodes, quantum-well and infrared photodetectors, and their applications. It has also been observed that when compared to other III-V room-temperature detectors currently …
Indium Antimonide | SpringerLink
Elastic Constants of Indium Antimonide from 4.2 to 300°K PHYS. REV., v. 113, no. 1, Jan. 1959. p. 167–169. Article Google Scholar. SMITH, S.D. et al. Temperature Dependence of Effective Mass in Indium Antimonide. A Detailed Study of Free Carrier, Interband and Oscillatory Faraday Rotation.
INDIUM ANTIMONIDE ( InSb )
This Book; Anywhere; Quick Search in Books. Enter words / phrases / DOI / ISBN / keywords / authors / etc. Search Search. Access type: Only show content I have full access to Only show Open Access. ... INDIUM ANTIMONIDE (InSb) Yu. A. Goldberg; Yu. A. Goldberg. Ioffe Institute, St. Petersburg, Russia.
Preparation of indium antimonide using a single …
Preparation of indium antimonide using a single-source precursor. Alan H. Cowley., Richard A. Jones., Christine M. Nunn., and. Donald L. Westmoreland. Cite …
Conductance through a helical state in an Indium …
Nature Communications - Indium antimonide nanowires have large spin-orbit coupling, which can give rise to helical states that are an important part of proposals …
Indium Antimonide (InSb)
This chapter illustrates various aspects of optical constants—namely, refractive index n and extinction coefficient k for indium antimonide (InSb). The high energy regime 155-14 eV is explored by Cardona et al who measured k by transmission, through evaporated thin films either freely suspended on copper mesh or on transparent …
Noise Emission from Indium Antimonide
R. D. Larrabee and W. A, Hicinbothem, Proceedings of the Seventh International Conference on the Physics of Semiconductors (Dunod Cie., Paris, 1965), p. 181.
Electronic and optical properties of InSb quantum …
Introduction. Indium antimonide (InSb) is a binary semiconducting material composed of indium (In) and antimony (Sb). It is a narrow-gap semiconductor since its …
Synthesis and Properties of Indium Antimonide Big …
Abstract. Colloidal chemistry techniques at elevated temperatures (250–300°C) have been used to synthesize big (up to 20 nm) quantum dots (QDs) based …
Photoelectric properties of indium antimonide
The dependence of electron and hole mobilities on carrier concentration has been determined for p-type indium antimonide with impurity concentrations ranging from 10/sup 14/ to 2 x 10/sup 17/ cm/sup -3/. The method used was the analysis of the variation of Hall coefficient and resistivity with a magnetic field. Good agreement was obtained with ...
Compositional analysis of dilute nitride doped indium antimonide …
Indium antimonide was doped with lead under liquid-phase epitaxial (LPE) conditions, permitting the composition of the starting phase and the temperature of the process to be varied within wide limits. To obtain the maximum solubility of lead at any chosen LPE temperature it was used as a metallic solvent. It was found that the solubility …
Large-diameter indium antimonide microwire based …
Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied. Nevertheless, studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful. Here, we successfully grew the micronsized indium …
Analytical Model of Quantum Efficiency of Indium-Antimonide …
Abstract The spectral characteristics of indium-antimonide photodetectors working in the mid-IR spectral range for detection, recognition, and identification of thermal objects are studied. The quantum efficiency is calculated versus the design parameters of photodiodes with allowance for the passage of radiation through antireflection coating …
Synthesis of Mn-doped indium antimonide nanowires by multi …
Here, a novel method is first developed to synthesize InSb nanowires without high temperature treatment. We have reported that indium nanostructures can be produced by multi-step GLAD in a thermal evaporation system [19]. Indium nanowires are prepared by the same method in this work. Fig. 1 a shows the morphology of as-prepared In …
Indium antimonide | InSb | CID 3468413
Indium antimonide | InSb | CID 3468413 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities ...
Electronic and optical properties of InSb quantum dots from
Indium antimonide (InSb) is a binary semiconducting material composed of indium (In) and antimony (Sb). It is a narrow-gap semiconductor since its energy band gap is 0.18 eV at 300 K and 0.23 eV at 80 K. The crystal structure is zinc-blende with a 6.48 Å lattice constant [1,2].
Colloidal Synthesis of InSb Nanocrystals with Controlled …
We report a new synthetic pathway for growing monodisperse colloidal indium antimonide nanocrystals. We propose that highly reactive element-nitrogen bonded precursors, such as In and Sb amides, may provide required nucleation and growth kinetics for the formation of uniform colloidal nanocrystals of InSb. Size-dependent absorption …
Liquid Phase Epitaxy of Electronic, Optical and …
This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that …
Shape Effect on the Electrical Properties of Indium-Antimonide Quantum
Indium antimonide-based QDs are of special interest due to the unique properties of this material, first of all its narrow (0.17 eV) direct band gap, small electron and hole effective masses (the electron effective mass is 0.013m 0, where m 0 is the free-electron mass [2–4]), and large de Broglie wavelength of electrons (up to ~55 nm).
Indium Antimonide Nanowires: Synthesis and Properties
The fifteenth anniversary of indium antimonide nanowires (InSb NWs) synthesis was recently monumentalized a good opportunity to review, try to discuss and compile few of its imperative aspects of synthesis, of the growth thermodynamics, of optical properties, and electrical characterizations. The proclamation of a fifteenth anniversary …
indium antimonide
indium antimonide. Formula: InSb; Molecular weight: 236.578; CAS Registry Number: ; Information on this page: Notes; Other data available: Gas phase ion …
Molecular beam epitaxial growth of indium antimonide and …
Indium antimonide (InSb) is a promising material for mid- and long-wavelength infrared device applications. However, because of material's small band gap and low melting point, reproducibility of high quality epitaxial InSb is difficult to obtain.
Chapter 2 Indium Antimonide Photoconductive and
INDIUM ANTIMONIDE DETECTORS 19 o` 3 2 0 I O > (3 I w U 2 0.20 t I F,C th P data (circles) of Roberts and Q~arrington.'~ data (squares) compiled by Long16 represent The values believed to be most accurate at 0, 77, and 300°K. data of Roberts and Quarringt~n,'~ additional points from Long's with review paper.
Refractive index of InSb (Indium antimonide)
Indium antimonide, InSb. Indium antimonide (InSb) is a III-V compound semiconductor with a zinc blende crystal structure. It possesses a very narrow energy band gap and high electron mobility, which make it particularly useful in infrared detectors and infrared astronomy applications. The material is highly sensitive to temperature variations ...
INDIUM ANTIMONIDE (InSb)
INDIUM ANTIMONIDE (InSb) Abstract. The following sections are included: Publication: Handbook Series on Semiconductor Parameters. Pub Date: 1996. DOI: Bibcode: …
